PMDPB95XNE MOSFET Transistor

The PMDPB95XNE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PMDPB95XNE transistor as follows.

PMDPB95XNE Transistor Specification

Transistor Code		PMDPB95XNE
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DFN2020-6
Transistor SMD Code		2U
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	2.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.12Ohm
Power Dissipation (Maximum)	PD	0.475W
Drain-Source Capacitance		43pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		11nS
Gate-Threshold Voltage (Maximum)		1.5V
Total Gate Charge		1.65nC

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