PMDPB85UPE MOSFET Transistor

The PMDPB85UPE is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PMDPB85UPE transistor as follows.

PMDPB85UPE Transistor Specification

Transistor Code		PMDPB85UPE
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		DFN2020-6
Transistor SMD Code		2C
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	2.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.103Ohm
Power Dissipation (Maximum)	PD	0.515W
Drain-Source Capacitance		78pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		0.95V
Total Gate Charge		5.4nC

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