PMDPB80XP MOSFET Transistor

The PMDPB80XP is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PMDPB80XP transistor as follows.

PMDPB80XP Transistor Specification

Transistor Code		PMDPB80XP
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		DFN2020-6
Transistor SMD Code		1U
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	2.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.102Ohm
Power Dissipation (Maximum)	PD	0.485W
Drain-Source Capacitance		63pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		14nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		5.7nC

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