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PMDPB80XP MOSFET Transistor

The PMDPB80XP is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PMDPB80XP transistor as follows.

Circuit diagram symbol of the PMDPB80XP transistor

PMDPB80XP Transistor Specification

Transistor Code PMDPB80XP
Transistor Type MOSFET
Control Channel Type P-Channel
Package DFN2020-6
Transistor SMD Code 1U
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 2.7A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.102Ohm
Power Dissipation (Maximum) PD 0.485W
Drain-Source Capacitance 63pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 14nS
Gate-Threshold Voltage (Maximum) 1V
Total Gate Charge 5.7nC

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