PMDPB58UPE MOSFET Transistor

The PMDPB58UPE is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PMDPB58UPE transistor as follows.

PMDPB58UPE Transistor Specification

Transistor Code		PMDPB58UPE
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		DFN2020-6
Transistor SMD Code		2A
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	3.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.067Ohm
Power Dissipation (Maximum)	PD	0.515W
Drain-Source Capacitance		95pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		15nS
Gate-Threshold Voltage (Maximum)		0.95V
Total Gate Charge		6.3nC

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