PMDPB55XP MOSFET Transistor

The PMDPB55XP is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PMDPB55XP transistor as follows.

PMDPB55XP Transistor Specification

Transistor Code		PMDPB55XP
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		DFN2020-6
Transistor SMD Code		1Z
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	3.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.07Ohm
Power Dissipation (Maximum)	PD	0.49W
Drain-Source Capacitance		80pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		14nS
Gate-Threshold Voltage (Maximum)		0.9V
Total Gate Charge		16.5nC

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