PMCPB5530X MOSFET Transistor

The PMCPB5530X is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PMCPB5530X transistor as follows.

PMCPB5530X Transistor Specification

Transistor Code		PMCPB5530X
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		DFN2020-6
Transistor SMD Code		1W
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.034Ohm
Power Dissipation (Maximum)	PD	0.49W
Drain-Source Capacitance		87pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		15nS
Gate-Threshold Voltage (Maximum)		0.9V
Total Gate Charge		14.4nC

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