PJW1NA80 MOSFET Transistor

The PJW1NA80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PJW1NA80 transistor as follows.

PJW1NA80 Transistor Specification

Transistor Code		PJW1NA80
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-223
Transistor SMD Code		1NA80
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	0.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	16Ohm
Power Dissipation (Maximum)	PD	3.3W
Drain-Source Capacitance		17pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		15nS
Gate-Threshold Voltage (Maximum)		4.4V
Total Gate Charge		6nC

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