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PJU1NA60A MOSFET Transistor

The PJU1NA60A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PJU1NA60A transistor as follows.

Circuit diagram symbol of the PJU1NA60A transistor

PJU1NA60A Transistor Specification

Transistor Code PJU1NA60A
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-251AB
Transistor SMD Code U1NA60A
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 1A
Drain-Source On-State Resistance (Maximum) RDS(on) 7.9Ohm
Power Dissipation (Maximum) PD 28W
Drain-Source Capacitance 28pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 20nS
Gate-Threshold Voltage (Maximum) 4V

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