PJT7801 MOSFET Transistor

The PJT7801 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PJT7801 transistor as follows.

PJT7801 Transistor Specification

Transistor Code		PJT7801
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-363
Transistor SMD Code		T01
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	0.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.26Ohm
Power Dissipation (Maximum)	PD	0.35W
Drain-Source Capacitance		25pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		37nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		2.2nC

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