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PJT7800 MOSFET Transistor

The PJT7800 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PJT7800 transistor as follows.

Circuit diagram symbol of the PJT7800 transistor

PJT7800 Transistor Specification

Transistor Code PJT7800
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT-363
Transistor SMD Code T00
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 1A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.15Ohm
Power Dissipation (Maximum) PD 0.35W
Drain-Source Capacitance 25pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 25.8nS
Gate-Threshold Voltage (Maximum) 1V
Total Gate Charge 1.6nC

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