PJT7600 MOSFET Transistor

The PJT7600 is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PJT7600 transistor as follows.

PJT7600 Transistor Specification

Transistor Code		PJT7600
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		SOT-363
Transistor SMD Code		T60
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.15Ohm
Power Dissipation (Maximum)	PD	0.35W
Drain-Source Capacitance		25pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		25.7nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		1.6nC

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