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PJT7600 MOSFET Transistor

The PJT7600 is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PJT7600 transistor as follows.

Circuit diagram symbol of the PJT7600 transistor

PJT7600 Transistor Specification

Transistor Code PJT7600
Transistor Type MOSFET
Control Channel Type NP-Channel
Package SOT-363
Transistor SMD Code T60
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 1A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.15Ohm
Power Dissipation (Maximum) PD 0.35W
Drain-Source Capacitance 25pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 25.7nS
Gate-Threshold Voltage (Maximum) 1V
Total Gate Charge 1.6nC

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