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PJP7NA65 MOSFET Transistor

The PJP7NA65 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PJP7NA65 transistor as follows.

Circuit diagram symbol of the PJP7NA65 transistor

PJP7NA65 Transistor Specification

Transistor Code PJP7NA65
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220AB
Transistor SMD Code P7NA65
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 7A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.5Ohm
Power Dissipation (Maximum) PD 145W
Drain-Source Capacitance 97pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 28nS
Gate-Threshold Voltage (Maximum) 4V

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