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PJP5NA80 MOSFET Transistor

The PJP5NA80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PJP5NA80 transistor as follows.

Circuit diagram symbol of the PJP5NA80 transistor

PJP5NA80 Transistor Specification

Transistor Code PJP5NA80
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220AB
Transistor SMD Code P5NA80
Drain-Source Voltage (Maximum) VDS 800V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 5A
Drain-Source On-State Resistance (Maximum) RDS(on) 2.7Ohm
Power Dissipation (Maximum) PD 146W
Drain-Source Capacitance 78pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 28nS
Gate-Threshold Voltage (Maximum) 4V

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