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PJP10NA60 MOSFET Transistor

The PJP10NA60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PJP10NA60 transistor as follows.

Circuit diagram symbol of the PJP10NA60 transistor

PJP10NA60 Transistor Specification

Transistor Code PJP10NA60
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220AB
Transistor SMD Code P10NA60
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 10A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.9Ohm
Power Dissipation (Maximum) PD 156W
Drain-Source Capacitance 137pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 29nS
Gate-Threshold Voltage (Maximum) 4V

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