PJF7NA65 MOSFET Transistor

The PJF7NA65 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PJF7NA65 transistor as follows.

PJF7NA65 Transistor Specification

Transistor Code		PJF7NA65
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ITO-220AB-F
Transistor SMD Code		F7NA65
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.5Ohm
Power Dissipation (Maximum)	PD	46W
Drain-Source Capacitance		97pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		28nS
Gate-Threshold Voltage (Maximum)		4V

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