PJF10NA60 MOSFET Transistor

The PJF10NA60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PJF10NA60 transistor as follows.

PJF10NA60 Transistor Specification

Transistor Code		PJF10NA60
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ITO-220AB-F
Transistor SMD Code		F10NA60
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.9Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		137pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		29nS
Gate-Threshold Voltage (Maximum)		4V

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