PJD7NA65 MOSFET Transistor

The PJD7NA65 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PJD7NA65 transistor as follows.

PJD7NA65 Transistor Specification

Transistor Code		PJD7NA65
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252AA
Transistor SMD Code		D7NA65
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.5Ohm
Power Dissipation (Maximum)	PD	140W
Drain-Source Capacitance		97pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		28nS
Gate-Threshold Voltage (Maximum)		4V

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