PJD6NA40 MOSFET Transistor

The PJD6NA40 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PJD6NA40 transistor as follows.

PJD6NA40 Transistor Specification

Transistor Code		PJD6NA40
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252AA
Transistor SMD Code		D6NA40
Drain-Source Voltage (Maximum)	VDS	400V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.95Ohm
Power Dissipation (Maximum)	PD	77W
Drain-Source Capacitance		78pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		26nS
Gate-Threshold Voltage (Maximum)		4V

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