PJD5NA80 MOSFET Transistor

The PJD5NA80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PJD5NA80 transistor as follows.

PJD5NA80 Transistor Specification

Transistor Code		PJD5NA80
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252AA
Transistor SMD Code		D5NA80
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.7Ohm
Power Dissipation (Maximum)	PD	140W
Drain-Source Capacitance		78pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		28nS
Gate-Threshold Voltage (Maximum)		4V

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