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PJD3NA80 MOSFET Transistor

The PJD3NA80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PJD3NA80 transistor as follows.

Circuit diagram symbol of the PJD3NA80 transistor

PJD3NA80 Transistor Specification

Transistor Code PJD3NA80
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-252
Transistor SMD Code D3NA80
Drain-Source Voltage (Maximum) VDS 800V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 3A
Drain-Source On-State Resistance (Maximum) RDS(on) 4.8Ohm
Power Dissipation (Maximum) PD 80W
Drain-Source Capacitance 50pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 23nS
Gate-Threshold Voltage (Maximum) 4V

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