PJD3NA50 MOSFET Transistor

The PJD3NA50 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PJD3NA50 transistor as follows.

PJD3NA50 Transistor Specification

Transistor Code		PJD3NA50
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Transistor SMD Code		D3NA50
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3.2Ohm
Power Dissipation (Maximum)	PD	34W
Drain-Source Capacitance		41.3pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		20.6nS
Gate-Threshold Voltage (Maximum)		4V

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