PJD1NA80 MOSFET Transistor

The PJD1NA80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PJD1NA80 transistor as follows.

PJD1NA80 Transistor Specification

Transistor Code		PJD1NA80
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Transistor SMD Code		D1NA80
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	16Ohm
Power Dissipation (Maximum)	PD	34W
Drain-Source Capacitance		17pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		15nS
Gate-Threshold Voltage (Maximum)		4.4V

UXPython is not the creator or an official representative of the PJD1NA80 MOSFET transistor. You can download the official PJD1NA80 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

SSM9918GH MOSFET Transistor CS730A4RD MOSFET Transistor IRFR5305PBF MOSFET Transistor MTN9971J3 MOSFET Transistor AOD421 MOSFET Transistor UTM3023 MOSFET Transistor MDD4N60BRH MOSFET Transistor RU30105L MOSFET Transistor CHM3301PAGP MOSFET Transistor AM35N03-59D MOSFET Transistor AFN9995S MOSFET Transistor MTB060N15J3 MOSFET Transistor SIHFR9020 MOSFET Transistor AOD4186 MOSFET Transistor RU3070L MOSFET Transistor WFD5N50 MOSFET Transistor MSD40P03 MOSFET Transistor SUD23N06-31 MOSFET Transistor RU2HE5L MOSFET Transistor CS4N60A4TDY MOSFET Transistor