PJ4N3KDW MOSFET Transistor

The PJ4N3KDW is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PJ4N3KDW transistor as follows.

PJ4N3KDW Transistor Specification

Transistor Code		PJ4N3KDW
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-363
Transistor SMD Code		4N3
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	5Ohm
Power Dissipation (Maximum)	PD	0.2W
Drain-Source Capacitance		8pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8.5nS
Gate-Threshold Voltage (Maximum)		1.5V
Total Gate Charge		0.8nC

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