PHX6ND50E MOSFET Transistor

The PHX6ND50E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHX6ND50E transistor as follows.

PHX6ND50E Transistor Specification

Transistor Code		PHX6ND50E
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT186A
Drain-Source Voltage (Maximum)	VDS	500V
Drain Current (Maximum)	ID	3.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.5Ohm
Power Dissipation (Maximum)	PD	35W
Operating Junction Temperature (Maximum)		150°C

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