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PHX6NA60E MOSFET Transistor

The PHX6NA60E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHX6NA60E transistor as follows.

Circuit diagram symbol of the PHX6NA60E transistor

PHX6NA60E Transistor Specification

Transistor Code PHX6NA60E
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT186A
Drain-Source Voltage (Maximum) VDS 600V
Drain Current (Maximum) ID 3.9A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.2Ohm
Power Dissipation (Maximum) PD 45W
Operating Junction Temperature (Maximum) 150°C

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