PHX20N06T MOSFET Transistor

The PHX20N06T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHX20N06T transistor as follows.

PHX20N06T Transistor Specification

Transistor Code		PHX20N06T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220F
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	12.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.075Ohm
Power Dissipation (Maximum)	PD	23W
Drain-Source Capacitance		90pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		50nS
Gate-Threshold Voltage (Maximum)		4V

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