PHX18NQ11T MOSFET Transistor

The PHX18NQ11T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHX18NQ11T transistor as follows.

PHX18NQ11T Transistor Specification

Transistor Code		PHX18NQ11T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220F
Drain-Source Voltage (Maximum)	VDS	110V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	12.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.09Ohm
Power Dissipation (Maximum)	PD	31.2W
Drain-Source Capacitance		105pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		4V

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