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PHW9N60E MOSFET Transistor

The PHW9N60E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHW9N60E transistor as follows.

Circuit diagram symbol of the PHW9N60E transistor

PHW9N60E Transistor Specification

Transistor Code PHW9N60E
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT429
Drain-Source Voltage (Maximum) VDS 600V
Drain Current (Maximum) ID 8.7A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.85Ohm
Power Dissipation (Maximum) PD 156W
Operating Junction Temperature (Maximum) 150°C
Total Gate Charge 130nC

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