PHU11NQ10T MOSFET Transistor

The PHU11NQ10T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHU11NQ10T transistor as follows.

PHU11NQ10T Transistor Specification

Transistor Code		PHU11NQ10T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		IPAK
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	10.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.18Ohm
Power Dissipation (Maximum)	PD	57.7W
Drain-Source Capacitance		60pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		23nS
Gate-Threshold Voltage (Maximum)		4V

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