PHT6NQ10T MOSFET Transistor

The PHT6NQ10T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHT6NQ10T transistor as follows.

PHT6NQ10T Transistor Specification

Transistor Code		PHT6NQ10T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SC73
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	6.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.09Ohm
Power Dissipation (Maximum)	PD	8.3W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		21nC

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