PHT2NQ10T MOSFET Transistor

The PHT2NQ10T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHT2NQ10T transistor as follows.

PHT2NQ10T Transistor Specification

Transistor Code		PHT2NQ10T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-223
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.43Ohm
Power Dissipation (Maximum)	PD	6.25W
Drain-Source Capacitance		29pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		7.7nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		5.1nC

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