PHP119NQ06T MOSFET Transistor

The PHP119NQ06T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHP119NQ06T transistor as follows.

PHP119NQ06T Transistor Specification

Transistor Code		PHP119NQ06T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0071Ohm
Power Dissipation (Maximum)	PD	200W
Drain-Source Capacitance		554pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		52nS
Gate-Threshold Voltage (Maximum)		4V

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