PHP110NQ06LT MOSFET Transistor

The PHP110NQ06LT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHP110NQ06LT transistor as follows.

PHP110NQ06LT Transistor Specification

Transistor Code		PHP110NQ06LT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	15V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.007Ohm
Power Dissipation (Maximum)	PD	200W
Drain-Source Capacitance		520pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		123nS
Gate-Threshold Voltage (Maximum)		2V

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