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PHM30NQ10T MOSFET Transistor

The PHM30NQ10T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHM30NQ10T transistor as follows.

Circuit diagram symbol of the PHM30NQ10T transistor

PHM30NQ10T Transistor Specification

Transistor Code PHM30NQ10T
Transistor Type MOSFET
Control Channel Type N-Channel
Package QLPAK
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 37.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.02Ohm
Power Dissipation (Maximum) PD 62.5W
Drain-Source Capacitance 430pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 11nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 53.7nC

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