PHKD6N02LT MOSFET Transistor

The PHKD6N02LT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHKD6N02LT transistor as follows.

PHKD6N02LT Transistor Specification

Transistor Code		PHKD6N02LT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	20V
Drain Current (Maximum)	ID	10.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.035Ohm
Power Dissipation (Maximum)	PD	4.17W

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