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PHK4NQ20T MOSFET Transistor

The PHK4NQ20T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHK4NQ20T transistor as follows.

Circuit diagram symbol of the PHK4NQ20T transistor

PHK4NQ20T Transistor Specification

Transistor Code PHK4NQ20T
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT96-1
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 4A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.13Ohm
Power Dissipation (Maximum) PD 6.25W
Drain-Source Capacitance 155pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 10nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 26nC

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