PHD98N03LT MOSFET Transistor

The PHD98N03LT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHD98N03LT transistor as follows.

PHD98N03LT Transistor Specification

Transistor Code		PHD98N03LT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0073Ohm
Power Dissipation (Maximum)	PD	111W
Drain-Source Capacitance		710pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		80nS
Gate-Threshold Voltage (Maximum)		2V

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