PHD96NQ03LT MOSFET Transistor

The PHD96NQ03LT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHD96NQ03LT transistor as follows.

PHD96NQ03LT Transistor Specification

Transistor Code		PHD96NQ03LT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.00495Ohm
Power Dissipation (Maximum)	PD	115W
Drain-Source Capacitance		725pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		70nS
Gate-Threshold Voltage (Maximum)		2V

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