PHD77NQ03T MOSFET Transistor

The PHD77NQ03T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHD77NQ03T transistor as follows.

PHD77NQ03T Transistor Specification

Transistor Code		PHD77NQ03T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0095Ohm
Power Dissipation (Maximum)	PD	107W
Drain-Source Capacitance		400pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		7.6nS
Gate-Threshold Voltage (Maximum)		3.2V

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