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PHD6N10E MOSFET Transistor

The PHD6N10E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHD6N10E transistor as follows.

Circuit diagram symbol of the PHD6N10E transistor

PHD6N10E Transistor Specification

Transistor Code PHD6N10E
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT428
Drain-Source Voltage (Maximum) VDS 100V
Drain Current (Maximum) ID 6.3A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.54Ohm
Power Dissipation (Maximum) PD 50W
Operating Junction Temperature (Maximum) 150°C

PHD6N10E MOSFET Transistor Overview

The PHD6N10E is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a SOT428 package, making it suitable for projects that require moderate power handling and reliable switching performance.

Key Electrical Characteristics of the PHD6N10E MOSFET

Followings are the key electrical characteristics of the PHD6N10E MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in PHD6N10E MOSFET transistor is 100V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the PHD6N10E MOSFET transistor is 6.3A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of PHD6N10E MOSFET transistor when the transistor is fully turned on is 0.54 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the PHD6N10E MOSFET transistor can comfortably transfer into heat without breaking is 50W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the PHD6N10E MOSFET transistor is switched on is . This is the rate at which PHD6N10E MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the PHD6N10E MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of PHD6N10E MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the PHD6N10E MOSFET transistor. You can download the official PHD6N10E MOSFET transistor datasheet to get more infromation about this transistor.

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