PHD6N10E MOSFET Transistor

The PHD6N10E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHD6N10E transistor as follows.

PHD6N10E Transistor Specification

Transistor Code		PHD6N10E
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT428
Drain-Source Voltage (Maximum)	VDS	100V
Drain Current (Maximum)	ID	6.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.54Ohm
Power Dissipation (Maximum)	PD	50W
Operating Junction Temperature (Maximum)		150°C

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