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PHD55N03LTA MOSFET Transistor

The PHD55N03LTA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHD55N03LTA transistor as follows.

Circuit diagram symbol of the PHD55N03LTA transistor

PHD55N03LTA Transistor Specification

Transistor Code PHD55N03LTA
Transistor Type MOSFET
Control Channel Type N-Channel
Package DPAK
Drain-Source Voltage (Maximum) VDS 25V
Gate-Source Voltage (Maximum) VGS 15V
Drain Current (Maximum) ID 55A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.014Ohm
Power Dissipation (Maximum) PD 85W
Drain-Source Capacitance 340pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 45nS
Gate-Threshold Voltage (Maximum) 2V

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