PHD55N03LT MOSFET Transistor

The PHD55N03LT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHD55N03LT transistor as follows.

PHD55N03LT Transistor Specification

Transistor Code		PHD55N03LT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT428
Drain-Source Voltage (Maximum)	VDS	25V
Drain Current (Maximum)	ID	55A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.018Ohm
Power Dissipation (Maximum)	PD	103W
Operating Junction Temperature (Maximum)		150°C

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