PHD50N06LT MOSFET Transistor

The PHD50N06LT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHD50N06LT transistor as follows.

PHD50N06LT Transistor Specification

Transistor Code		PHD50N06LT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	13V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.022Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		300pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		80nS
Gate-Threshold Voltage (Maximum)		2V

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