PHD38N02LT MOSFET Transistor

The PHD38N02LT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHD38N02LT transistor as follows.

PHD38N02LT Transistor Specification

Transistor Code		PHD38N02LT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	44.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.016Ohm
Power Dissipation (Maximum)	PD	57.6W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		1.5V
Total Gate Charge		15.1nC

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