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PHD38N02LT MOSFET Transistor

The PHD38N02LT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHD38N02LT transistor as follows.

Circuit diagram symbol of the PHD38N02LT transistor

PHD38N02LT Transistor Specification

Transistor Code PHD38N02LT
Transistor Type MOSFET
Control Channel Type N-Channel
Package DPAK
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 44.7A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.016Ohm
Power Dissipation (Maximum) PD 57.6W
Operating Junction Temperature (Maximum) 175°C
Gate-Threshold Voltage (Maximum) 1.5V
Total Gate Charge 15.1nC

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