PHD36N03LT MOSFET Transistor

The PHD36N03LT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHD36N03LT transistor as follows.

PHD36N03LT Transistor Specification

Transistor Code		PHD36N03LT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	43.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.022Ohm
Power Dissipation (Maximum)	PD	57.6W
Drain-Source Capacitance		160pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		2V

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