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PHD36N03LT MOSFET Transistor

The PHD36N03LT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHD36N03LT transistor as follows.

Circuit diagram symbol of the PHD36N03LT transistor

PHD36N03LT Transistor Specification

Transistor Code PHD36N03LT
Transistor Type MOSFET
Control Channel Type N-Channel
Package DPAK
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 43.4A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.022Ohm
Power Dissipation (Maximum) PD 57.6W
Drain-Source Capacitance 160pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 10nS
Gate-Threshold Voltage (Maximum) 2V

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