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PHD3055E MOSFET Transistor

The PHD3055E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHD3055E transistor as follows.

Circuit diagram symbol of the PHD3055E transistor

PHD3055E Transistor Specification

Transistor Code PHD3055E
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT428
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 10.3A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.15Ohm
Power Dissipation (Maximum) PD 33W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 4V

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