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PHD23NQ10T MOSFET Transistor

The PHD23NQ10T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHD23NQ10T transistor as follows.

Circuit diagram symbol of the PHD23NQ10T transistor

PHD23NQ10T Transistor Specification

Transistor Code PHD23NQ10T
Transistor Type MOSFET
Control Channel Type N-Channel
Package DPAK
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 23A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.07Ohm
Power Dissipation (Maximum) PD 100W
Drain-Source Capacitance 139pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 39nS
Gate-Threshold Voltage (Maximum) 4V

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