PHD20N06T MOSFET Transistor

The PHD20N06T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHD20N06T transistor as follows.

PHD20N06T Transistor Specification

Transistor Code		PHD20N06T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	18A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.077Ohm
Power Dissipation (Maximum)	PD	51W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		4V

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