PHD18NQ10T MOSFET Transistor

The PHD18NQ10T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHD18NQ10T transistor as follows.

PHD18NQ10T Transistor Specification

Transistor Code		PHD18NQ10T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	18A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.09Ohm
Power Dissipation (Maximum)	PD	79W
Drain-Source Capacitance		103pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		36nS
Gate-Threshold Voltage (Maximum)		4V

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