PHD16N03LT MOSFET Transistor

The PHD16N03LT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHD16N03LT transistor as follows.

PHD16N03LT Transistor Specification

Transistor Code		PHD16N03LT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	15V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.067Ohm
Power Dissipation (Maximum)	PD	32.6W
Drain-Source Capacitance		85pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		6nS
Gate-Threshold Voltage (Maximum)		2V

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